| PART |
Description |
Maker |
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SK1274 2SK1274-T |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK2484 |
Nch power MOSFET MP-25 900V/5A
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK1760 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Power Transistor
|
NEC[NEC]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| M68732LA 68732LA |
400 MHz - 450 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
From old datasheet system
Silicon MOS FET Power Amplifier, 400-450MHz 7W FM PORTABLE
SILICON MOS FET POWER AMPLIFIER, 400-450MHz, 7W, FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-450 MHz 7W FM PORTABLE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NP80N04NHE NP80N04NHE-S18-AY NP80N04DHE NP80N04DHE |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC
|
